Volume 28 Issue 6 - February 13, 2015
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Article Digest
HsiI Hsiang
CuInSe2 Formation from CuSe/In2Se3 and Cu2Se/In2Se3 Powders: Reaction Kinetics and Mechanisms
Tse-Ming Chen
All-Electrical Injection and Detection of a Spin-Polarized Current Using 1D Conductors
Shaw-Jenq Tsai
Suppression of COUP-TFII by Proinflammatory Cytokines Contributes to the Pathogenesis of Endometriosis
Shoou-Jinn Chang
Dislocation reduction through nucleation and growth selectivity of metalorganic chemical vapor deposition GaN
News Release
NCKU Press Center
NCKU hosts Chinese New Year Gala for foreign students
NCKU Press Center
Taiwan, Russia’s ocean experts meet in NCKU
NCKU Press Center
MDIC, NLAC sign agreement to foster academic collaboration
News Release
NCKU Press Center
Dr. Huey-Jen Su inaugurated as NCKU’s president
NCKU Press Center
NCKU hosts international conference on gerontological research
NCKU Press Center
NCKU professor Hong-Sen Yan named minister of the Executive Yuan
NCKU Press Center
NCKU transnational research team develops first all-electric spin transistor
Banyan Forum
Editorial Group
NCKU transnational research team develops first all-electric spin transistor
NCKU Press Center
[Tainan, Taiwan, February 5, 2015]
Scientists have long been puzzled by the spin-field-effect transistor (spin FET) and great efforts have been put into attempt of solving the long challenged problems. Now a Tainan-based National Cheng Kung University (NCKU) research team has successfully developed the first spin FET.

A team led by Prof. Tse-Ming Chen from the Department of Physics at NCKU, in cooperation with Cavendish Laboratory, and University College of London in UK, has developed an all-electric all-semiconductor spin FET, the university revealed at a press conference in Taipei today.

Prof. Chen said, the spin FET, since envisioned by Datta and Das in 1990, has long been believed to be the solution where Moore’s law fails to deliver.

However, the realization of a functional spin FET has hitherto not been achieved, owing to several technical problems such as the low spin-injection efficiency, the limited spin lifetime, and the phase spread of the accumulated spins, according to Prof. Chen.

He said, “We solved the problems by employing two quantum point contacts as spin injectors and detectors.”

“We exploit two engineering architectures of spin-orbit coupling, the interaction between the electron’s spin and its motion, on the device to electrically inject, manipulate, and detect spins,” he added.

Prof. Chen also explained, The all-electric all-semiconductor characteristics of such a device allow it to be easily compatible with large-scale integrated circuits and hold the most promise for information processing in the post-CMOS era.

Their results published in the January 2015 issue of Nature Nanotechnology with additional introduction in news &views article written by Marc Cahay.

The technology underlying the study is now in the process of applying for a patent, according to Prof. Chen.
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