Volume 28 Issue 6 - February 13, 2015 PDF
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Articles Digest

Research Express@NCKU Feb. 13 ~ Feb. 25, 2015

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CuInSe2 Formation from CuSe/In2Se3 and Cu2Se/In2Se3 Powders: Reaction Kinetics and Mechanisms
HsiI Hsiang

I-III-VI chalcopyrite thin film solar cells were developed over more than ten years to improve the conversion efficiency and reduce the cost. CuInSe2 (CIS) is one of the most important semiconductor materials used in thin film photovoltaic cells due to a favorable band gap and relatively high absorption coefficient. The conventional vacuum processes for CIS have many shortcomings such …

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All-Electrical Injection and Detection of a Spin-Polarized Current Using 1D Conductors
Tse-Ming Chen

As the collapse of Moore's Law seems to be foreseeable, there is considerable interest in being able to control the spin dynamics because this could lead to the development of a range of spintronic devices that in principle are much faster and use less energy than their electronic counterparts. In order to implement successfully such concepts into, for example, quantum computing it is necessary …

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Suppression of COUP-TFII by Proinflammatory Cytokines Contributes to the Pathogenesis of Endometriosis
Shaw-Jenq Tsai

Endometriosis is a common gynecological disease in women of reproductive age, and always leads to chronic pelvic pain and infertility. Surgical removal of endometriotic lesions is the gold standard of current treatment regimen; however, about 50% of patients relapse within 5 years after surgery. Therefore, it is critical to study underlying mechanisms responsible for endometriosis formation and …

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Dislocation reduction through nucleation and growth selectivity of metalorganic chemical vapor deposition GaN
Shoou-Jinn Chang

GaN and III-nitride alloys have emerged as surpassingly useful materials for the fabrication of green-to-ultraviolet light-emitting diodes, 1–3 laser diodes4 and high-power, high-efficiency transistor devices5 due to their widely tunable bandgap. Heteroepitaxial growth of GaN on Si, sapphire and/or SiC, is an important and fundamental technological challenge …

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