Shoou-Jinn Chang
GaN and III-nitride alloys have emerged as surpassingly useful materials for the fabrication of green-to-ultraviolet light-emitting diodes, 1–3 laser diodes4 and high-power, high-efficiency transistor devices5 due to their widely tunable bandgap. Heteroepitaxial growth of GaN on Si, sapphire and/or SiC, is an important and fundamental technological challenge …