Volume 24 Issue 9 - September 13, 2013 PDF
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Dielectric Properties of High-Q (Mg1-xZnx)1.8Ti1.1O4 Ceramics at Microwave Frequency
Cheng-Liang Huang*, Yu-Wei Tseng, Jhih-Yong Chen, and Yuan-Cheng Kuo
Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
 
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(Mg1–xZnx)1.8Ti1.1O4 (x = 0.03–1.00) ceramics were prepared via the conventional solid-state method and their dielectric properties were investigated in the microwave frequency region. Formation of solid solutions was confirmed by the X-ray diffraction analysis, the EDX analysis, and the measured lattice parameters. A small amount of Zn substitution for Mg produced a large increase in Q×f due to a high packing fraction as well as a high relative density of the ceramics. By increasing x from 0.00 to 0.06, the Q×f of the specimen could be tremendously improved from 141,000 to a maximum of 210,700 GHz (at 10.52 GHz), demonstrating an unique potential for low-loss microwave applications. The τf values were found to retain in the range from –54.2 to –62.3 ppm/ oC for all compositions because the resultant change of unit cell volume was small. Also, a remarkable lowering of the sintering temperature down to ~300 oC was observed when Mg was totally substituted by Zn, thereby making it possible for low firing applications.
Fig. 1(a). Relative density of (Mg1–xZnx)1.8Ti1.1O4 (x = 0.03–1.00) ceramic system sintered at different temperatures for 4 h; Fig. 1(b). Dielectric constant of (Mg1–xZnx)1.8Ti1.1O4 (x = 0.03–1.00) ceramic system sintered at different temperatures for 4 h.
Fig. 2(a). Q×f values of  (Mg1–xZnx)1.8Ti1.1O4 (x = 0.03–1.00) ceramic system sintered at different temperatures for 4 h; Fig. 2(b). τf values of  (Mg1–xZnx)1.8Ti1.1O4 (x = 0.03–1.00) ceramic system sintered at different temperatures for 4 h.
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