Volume 23 Issue 3 - January 25, 2013 PDF
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Articles Digest

Research Express@NCKU Jan. 25 ~ Feb. 7, 2013

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Significant Processing Parameters for Sintered Density, Phase Development, and Microstructure Observation of Sr2FeMoO6
Tsang-Tse Fang

I. Introduction

The double perovskite Sr2FeMoO6 (SFMO) has drown a lot of attention due to its high value of low-field magnetoresistance (LFMR) near room temperature.1,2 The plausible mechanism of LFMR was suggested to stem from spin-electron transfer at grain boundaries. The band structure of SFMO, based on first-principle calculations, indicated that it was fully spin polarized, 1 and thus, …

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Product-form design model based on genetic algorithms
Shih-Wen Hsiao

In highly competitive market, enterprises must continually design products to satisfy customer needs to avoid displacement by market competitors.  When planning strategies for marketing products to various users and consumers, managers must often consider multiple combinations of product shapes and must design products that cater to consumer tastes to minimize the risk of their products being …

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Efficiency Improvement of Top-emission Organic Light-emitting Diode by Using UV-ozone, Doped Emission Layer, and Hole-blocking Layer
Wei-Chou Hsu

In this work we study the approaches to improve the performance of the top-emission light-emitting diode (TOLED) with a treated-Ag anode. As shown in Fig. 1, the work function of Ag increases under the UV-ozone exposure. The increased work function is attributed to the formation of silver oxide (AgOx) on Ag film, in which the ionization potential is around 5.3 eV. However, …

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On an AlGaInP-Based Light Emitting Diode with an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
Wen-Chau Liu

The quaternary (AlxGa1-x)0.5In0.5P alloy, grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD), exhibiting a direct bandgap from 1.9 to 2.25 eV is an attractive material system for light-emitting diodes (LEDs) covering the visible spectrum from the yellow-green to red region. Recently, based on the significant improvement on epitaxial quality of AlGaInP-based material system, the internal quantum efficiency (ηi) of AlGaInP LEDs has reached near 100%. …

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