Yeong-Her Wang
A selective, low cost, low temperature (30–70˚C), liquid phase oxidation of InGaAs using metal or photoresist as the mask has been proposed, and the oxide film composition and some process issues are also evaluated. Finally, the application of InAlAs/InGaAs MOS-MHEMT without gate recess has also been demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. …