Volume 6 Issue 8 - November 28, 2008
Articles Digest

Research Express@NCKU Nov. 28 ~ Dec. 4, 2008

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Laboratory Tests for Simulating Abrasion Damage of a Woven Geotextile
Ching-Chuan Huang

ABSTRACT
As a part of the study into the durability of geosynthetic tubes (or bags) used for seashore and streambank protections, a circular flow chamber was used to investigate the abrasion damage of a woven geotextile subjected to various turbid flow conditions, such as test durations, flow velocities and particle concentrations.  The ultimate strength loss of the tested woven geotextile ...


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Isolation and Total Synthesis of Antofine as the Potent Anticancer Prodrug
Tian-Shung Wu

The cancer has been ranking high ten greatest leading cause of deaths in Taiwan, and still is successively rising. Cancer is not only the most serious health problem in Taiwan, but also one of the rigorous challenge items that an international community has to face. Owing to the lately technological achievement changes with each passing day, new drugs and methods of curing the cancer are been ...

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A Possible Therapeutic Strategy for CNS Repair:To blockade calcium regulation of glutamate aspartate transporter regulation in astrocytes
Shun-Fen Tzeng

Introduction
Astrocytes, the predominant glial population in the CNS, regulate neuronal maturation, neuronal metabolic/neurotransmitter homeostasis and synaptic plasticity in developing and adult CNS.  During excitatory synaptic transmission in the healthy CNS, glutamate is briefly released at a high concentration into the extracellular space, and normal physiological levels are maintained by ...


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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
Mau-Phon Houng

For the demand of having higher light output power at a lower power consumption, the conventional GaN-based LED chips fabricated on the sapphire substrate still could not achieve such a requirement because of having a relatively low value of the external quantum efficiency (ηext). The main reason for such a low efficiency value is resulted by the great extent of the total internal ...

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Investigation of Bulk Traps Enhanced Gate Induced Leakage Current in Hf-based MOSFETs
Y.K. Fang

Recently, Hf-based high-k dielectrics have been investigated widely in order to replace conventional SiO2 for reducing gate leakage current. However, because of the high density of bulk traps, device with Hf-based dielectric also suffers mobility degradation and poor reliability. In addition, it has been reported that the bulk traps significantly enhance the gate induced drain leakage ...

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