In sub-130 nm semiconductor-device
manufacturing, electroplating is a promising method to form copper
(Cu) interconnections in dual-damascene structures due to its
excellent gap-filling capacity and high throughput. In order to
achieve a defect-free gap filling, a mixture of external organic
additives, such as accelerators, levelers, and suppressors, is used
to control plating kinetics. In a typical bath chemistry,
bis-(3-sulfopropyl)-disulfide Na salt (SPS: NAO3S(CH2)3SS(CH2)3SO3Na) acts as the accelerator.
Accelerators are believed to adsorb on the growing Cu surface and to
participate in charge transfer; accelerators coadsorbed with
suppressors would thus offer growth sites on the cathode surface,
otherwise occupied by other additives exhibiting inhibiting action.
However, the gap-filling capability of Cu electroplating and the
defect performance after Cu chemical-mechanical-polishing (CMP)
processes are impacted as the SPS molecules are decomposed or
oxidized during the aging of the plating bath. Hence, the
decomposition effect of SPS is worth investigating. The most
prevalent current technology for automated in-line control of bath
chemistry employs cyclic voltametric stripping (CVS). Use of these
methods to accurately control process chemistry is difficult at best
and ignores direct measurement of breakdown products. Breakdown
products which occur during processing and bath aging are expected
to be a major factor in the quality of the deposited film and are a
process variable in need of direct process control.
Because
Cu metal is used as an anode during Cu electroplating, in this
study, the decomposition effect of SPS with various surface areas of
Cu metals was investigated using mass spectroscopy. The mass
spectrum shows that 1,3-propanedisulfonic acid (PDS) was the most
stable species among SPS by-products. The equivalent circuit of Cu
electroplating was developed and then examined using electrochemical
impedance spectroscopy (EIS) to characterize the properties of the
aged bath with the decomposition of SPS. Defect elimination is still
an arduous task in the Cu-metallization process. Hence, efficiently
controlling the decomposition of SPS and the generation of PDS is
very important to reduce Cu-defect formation after the Cu-CMP
process.
In this study, an additive-free solution consisting
of 0.25 mol/L CuSO4•5H2O, 1.0 mol/L sulfuric acid, and 50
ppm chloride ions was used. 7.5 mL/L SPS was added to the
additive-free solution as the standard electrolyte because a
concentration of 5–15 mL/L SPS is used in semiconductor Cu
electroplating processes. All SPS species were defined and quantized
using mass spectroscopy based on the Metara Sentry CCM tool. The
equivalent circuit was built and simulated using ZSimpWin version
3.1 with EIS data. The overall experiment flow is shown in Fig.
1.
Figure 1: Scheme of the overall experiment on the
decomposition of SPS with Cu metals.
The mass spectrometry
(MS) spectrums of fresh and aged baths are shown in Fig. 2a and b,
respectively. Except for SPS and Cu(SO4)22−, the MS spectrums reveal
many peaks, including [O3S(C2H4)CHO]−, [O3(C3H5)]−, and [O3S(C3H6)SH]−
[mercaptopropanesulfonic acid](MPS), and PDS, all of which were
by-products decomposed from SPS. In order to quantize the SPS
concentration, bis(2-sulfethyl) disulfide and
bis(1-sulfopropyl-1-sulfobutyl) disulfide peaks were used as spikes.
Furthermore, the peaks such as [O3(C3H5)]− changed less and the
concentration was not stable for the comparison with PDS because it
was the intermedium of SPS decomposition. The PDS peaks in Fig. 2a
and b changed more than other peaks of the SPS by-products because
PDS was the most stable species among them.
Figure 2: Mass spectrum of SPS species and its byproducts
in (a) the fresh bath and (b) the aged bath.
According to
Bailey et al., there are two pathways for the SPS decomposition to
PDS, as shown in Fig. 3. In addition, MPS converted into SPS with
time, which suggested that SPS decomposition to PDS formation is
mainly processed through [(SPS)Ox] oxidation. By going through complex
redox or hydrolysis reactions, it is thought that two PDS molecules
will be generated from the consumption of one SPS molecule.
Figure 3: Major decomposition pathways of SPS to MPS and
PDS.
Furthermore, the Nyquist plots of Fig. 4 reveal that
there were three semicircles in the electrochemical analysis of
plating baths containing SPS. An equivalent circuit simulated using
the EIS data shows that the electrochemical system consisted of
three resistances, two capacitances, and one inductance, as shown in
Fig. 5. In this circuit, Rs is the bulk solution resistance,
Cdl is the double-layer
capacitance, Rc is the
charge-transfer resistance associated with the double layer,
Rad is the resistance of
the adsorption layer, Cp
is the passivative capacitance associated with the adsorption layer,
and L is the adsorption-layer inductance. In summary, the
elements of the equivalent circuit in the electrochemical system
reveal the properties of the aged bath with the decomposition of
SPS.

Figure 5: Proposed equivalent circuit diagram of Cu
electroplating in the electrolyte with SPS.
Figure 4: Nyquist plots of the bath at different hours
after dipping the samples.